
TECHNOLOGY: III-V/InP bonding on Silicon
Our unique approach, called BackSide-on-BOX, enables seamless and extensive integration of active and passive optical components by combining Si and InP/III-V materials.
Unprocessed InP/III-V dies are bonded on the backside of processed Silicon-On-Insulators (SOI) wafers, only where it is needed. Our fabrication process is CMOS-compatible and relies on the standard silicon-photonics process. Our optical component library includes lasers (CWDM & DWDM laser arrays), modulators, SOAs, waveguides, wavelength filters, surface fiber couplers, and photodetectors.
FABRICATION STEPS: III-V/InP Integration steps with Silicon Photonics
BENEFITS: Speed, Density, Power and Cost Efficiency

PERFORMANCE
AND
RELIABILITY
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High-coupling efficiency of lasers in the waveguide
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No alignment of lasers needed
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Optical amplification on-chip
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High-speed modulator with low insertion loss
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Intrinsic hermetic design

FEATURE-RICH
IN A COMPACT FORM FACTOR
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All-optical components in one-chip, including lasers
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Germanium (Ge) for efficient photodetector
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Silicon Nitride (SiNx) for improved passive devices

COST OPTIMISED
FOR VOLUME
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Production in commercial foundry
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Wafer-level lasers integration & test
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Flip-chip assembly for Electronic IC
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No hermetic package needed
CONTACT US
SCINTIL Photonics
BHT – Bât. 52
7, parvis Louis Néel – CS 20050
38040 Grenoble cedex 09
France