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TECHNOLOGY: III-V/InP bonding on Silicon

Our unique approach, called BackSide-on-BOX, enables seamless and extensive integration of active and passive optical components by combining Si and InP/III-V materials.

Unprocessed InP/III-V dies are bonded on the backside of processed Silicon-On-Insulators (SOI) wafers, only where it is needed. Our fabrication process is CMOS-compatible and relies on the standard silicon-photonics process. Our optical component library includes lasers (CWDM & DWDM laser arrays), modulators, SOAs, waveguides, wavelength filters, surface fiber couplers, and photodetectors. 

Fabrication Steps

FABRICATION STEPS: III-V/InP Integration steps with Silicon Photonics

Benefits

BENEFITS:  Speed, Density, Power and Cost Efficiency

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PERFORMANCE
AND 
RELIABILITY

  • ​High-coupling efficiency of lasers in the waveguide

  • No alignment of lasers needed

  • Optical amplification on-chip

  • High-speed modulator with low insertion loss

  • Intrinsic hermetic design

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FEATURE-RICH

IN A COMPACT FORM FACTOR

  • All-optical components in one-chip, including lasers

  • Germanium (Ge) for efficient photodetector

  • Silicon Nitride (SiNx) for improved passive devices 

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COST OPTIMISED 

FOR VOLUME

  • Production in commercial foundry ​

  • Wafer-level lasers integration & test 

  • Flip-chip assembly for Electronic IC

  • No hermetic package needed

CONTACT US

SCINTIL Photonics

BHT – Bât. 52  

7, parvis Louis Néel – CS 20050  

38040 Grenoble cedex 09

France

 

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